4925

Ответ от Alexander[гуру]
Vishay Siliconix
Si4925BDY
Document Number: 72001
S09-0869-Rev. D, 18-May-09
ссылка
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Dual P-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches
- Notebook PCs
- Desktop PCs
- Game Stations
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) ID (A)
- 30
0.025 at VGS = - 10 V - 7.1
0.041 at VGS = - 4.5 V - 5.5
S1 D1
G1 D1
S2 D2
G2 D2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4925BDY-T1-E3 (Lead (Pb)-free)
Si4925BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
G1
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS - 30
V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
ID
- 7.1 - 5.3
A
TA = 70 °C - 5.7 - 4.3
Pulsed Drain Current IDM - 40
Continuous Source Current (Diode Conduction)a IS - 1.7 - 0.9
Maximum Power Dissipationa
TA = 25 °C
PD
2.0 1.1
W
TA = 70 °C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambienta t ≤ 10 s
RthJA
50 62.5
Steady State 85 110 °C/W